vishay gmf05c - hs3 document number 85654 rev. 2, 04-nov-02 vishay semiconductors www.vishay.com 1 6 5 4 1 2 3 16905 esd protection diode array features ? transient protection for data lines as per iec 1000 - 4 - 2 (esd) 15 kv (air), 8 kv (contact) iec 1000 - 4 - 4 (eft) 40 a ( tp = 5/50 ns) iec 1000 - 4 - 5 (lightning) 12 a (tp = 8/20 s) small package for use in portable electronics bidirectional protection of 4 i/o lines unidirectional protection of 5 i/o lines low leakage current low operating and clamping voltages ideal for cellular handsets, cordless phones, note- books, handhelds and digital cameras mechanical data case: leadless plastic package with heatsink molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 250 c/10 sec. at terminals weight: approx. 5.1 mg marking code: tbd absolute maximum ratings thermal characteristics electrical characteristics parameter test condition sub type symbo l value unit peak pulse power 8/20 s waveform p ppm 200 w peak pulse current 8/20 s waveform i pp 12 a parameter test condition symbol value unit operating temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c lead soldering temperature (10 sec.) t l 260 c parameter test condition sub type symbol min ty p. max unit reverse stand-off voltage v rwm 5 v reverse breakdown voltage i t = 1 ma v br 6 v reverse leakage current v rwm = 5 v i r 10 a clamping voltage i pp = 1 a, 8/20 s waveform v c 9.5 v i pp = 12 a, 8/20 s waveform v c 12.5 v peak forward voltage i f = 1 a, 8/20 s waveform v f 1.5 v junction capacitance between i/o pins and gnd v r = 0 v, f = 1 mhz c j 150 pf
www.vishay.com 2 document number 85654 rev. 2, 04-nov-02 vishay gmf05c - hs3 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. non -repetitive peak pulse power vs. pulse time figure 2. pulse derating curve figure 3. pulse waveform p ppm - peak pulse power (kw) 0.1 1 10 0.1 1.0 10 td - pulse duration ( s) 100 1000 0.01 gGMF05C-HS3_01 0 25 50 75 100 0 75 25 50 100 125 150 175 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a - ambient t emperature ( c) gGMF05C-HS3_02 0 50 100 90 80 70 60 40 30 20 10 110 i ppm - peak pulse current, % i rsm pulse width (td) is defined as the point where the peak current decays to 50% of i ppm 0 10 5 15 20 30 25 t- time ( s) t d = i pp 2 gGMF05C-HS3_03 figure 4. clamping voltage vs. peak pulse current i pp - peak pulse current (a) 0 10 20 18 16 14 12 8 6 4 2 v c - clamping voltage (v) 0 4 2 68 14 10 12 gGMF05C-HS3_04
vishay gmf05c - hs3 document number 85654 rev. 2, 04-nov-02 vishay semiconductors www.vishay.com 3 package dimensions in mm iso method e heat sink 1,6 0.07 1,6 0.07 0,6 1 0,5 1 0.030 0.15 0.25 0.05 0.25 0.035 0.25 0.035 0.5 0.030 0.25 0.035 0,7 0,05 16922
www.vishay.com 4 document number 85654 rev. 2, 04-nov-02 vishay gmf05c - hs3 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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